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[Analysis Case] Quality Evaluation of SiC Substrates

Evaluation of crystal orientation, in-plane defect distribution, surface roughness, and impurities.

SiC power devices are expected to reduce power loss and handle high power in a compact form as power conversion elements. The quality evaluation of SiC substrates, which is necessary for manufacturing these devices, has become a challenge. We propose a method to evaluate and quantify the crystal orientation, in-plane defect distribution, surface roughness, and impurities of SiC substrates, as well as to visualize these factors. Measurement methods: XRD, AFM, PL, SIMS Product fields: Power devices, lighting Analysis purposes: Trace concentration evaluation, structural evaluation, shape evaluation, failure analysis, defect analysis For more details, please download the materials or contact us.